Title :
Design and performance of InAlGaAs/InAlAs superlattice avalanche photodiodes
Author :
Watanabe, Isao ; Tsuji, Masayoshi ; Hayashi, Masako ; Makita, Kikuo ; Taguchi, Kenko
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
6/1/1997 12:00:00 AM
Abstract :
InAlGaAs-InAlAs superlattice avalanche photodiodes (SL-APD´s) have been designed and experimentally analyzed. The layer structures and the electric field profiles were designed for 10 Gb/s applications. The mesa-structure SL-APD´s exhibited a gain-bandwidth product of 120-150 GHz, a top bandwidth of 15 GHz, and a multiplied dark current of 15-20 nA for a mesa-diameter of 30 μm. Other characteristics, such as temperature dependence of dark current and dynamic ranges, were also analyzed. Furthermore, an estimated life-time of longer than 105 h was achieved for the first time. The obtained characteristics, especially their high-speed characteristics with their low dark current, indicate potential for 2.5-10 Gb/s high-sensitivity and small optical receiver applications
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; optical design techniques; optical receivers; semiconductor superlattices; sensitivity; 10 Gbit/s; 15 to 20 nA; 2.5 to 10 Gbit/s; 30 mum; Gb/s applications; Gb/s high-sensitivity; InAlGaAs-InAlAs; InAlGaAs-InAlAs superlattice avalanche photodiode design; InAlGaAs/InAlAs superlattice avalanche photodiodes; dark current; dynamic ranges; electric field profiles; estimated life-time; gain-bandwidth product; high-speed characteristics; layer structures; low dark current; mesa-structure; multiplied dark current; small optical receiver applications; temperature dependence; top bandwidth; Avalanche photodiodes; Bandwidth; Dark current; Dynamic range; Indium compounds; Indium gallium arsenide; Optical fiber couplers; Optical receivers; Superlattices; Temperature dependence;
Journal_Title :
Lightwave Technology, Journal of
