Title :
An approximate analytical formulation of the intrinsic base resistance in two planar dimensions
Author :
Hook, Terence B.
Author_Institution :
IBM Gen. Technol. Div., Essex Junction, VT, USA
fDate :
11/1/1991 12:00:00 AM
Abstract :
The author demonstrates the accuracy of an approximate analytical model for the current-dependent base resistance for a two-dimensional rectangular emitter with various boundary conditions. This model is based on the analytical formulation of the one-dimensional case, with the conductance parameters empirically modified to represent two-dimensional current flow. The results of this model are compared directly to a finite-element model and the error is shown to be small for a wide range of emitter aspect ratios
Keywords :
bipolar transistors; electric resistance; semiconductor device models; 2D current flow; boundary conditions; conductance parameters; current-dependent base resistance; model; two-dimensional rectangular emitter; Boundary conditions; Circuit simulation; Equations; Finite element methods; Geometry; Power dissipation; SPICE; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
