DocumentCode
1556515
Title
Impact ionization phenomena in AlGaAs/GaAs HEMTs
Author
Canali, C. ; Paccagnella, A. ; Pisoni, P. ; Tedesco, C. ; Telaroli, P. ; Zanoni, E.
Author_Institution
Dipartimento di Elettronica e Inf., Padova Univ., Italy
Volume
38
Issue
11
fYear
1991
fDate
11/1/1991 12:00:00 AM
Firstpage
2571
Lastpage
2573
Abstract
The impact ionization current in AlGaAs/GaAs high-electron-mobility-transistors (HEMTs) is evaluated by means of measurements of the gate current and high drain voltages. A previously reported method to calculate impact ionization coefficient in GaAs MESFETs is extended to HEMTs. Results agree with the hypothesis that impact ionization takes place nearly exclusively in GaAs, and closely follow previously reported data for the electron impact ionization coefficient in ⟨110⟩ GaAs
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; AlGaAs-GaAs; HEMTs; drain voltages; gate current; high-electron-mobility-transistors; impact ionization current; Breakdown voltage; Current measurement; Electric breakdown; Gallium arsenide; HEMTs; Impact ionization; Irrigation; MESFETs; MODFETs; Temperature measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.97428
Filename
97428
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