Comment on "Effect of radiation and surface recombination on the characteristics of an ion-implanted GaAs MESFET

Author

Chakrabarti, P.

Author_Institution

Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India

Volume

38

Issue

11

fYear

1991

Firstpage

2578

Abstract

For the original article see ibid., vol.37, no.1, p.2-10 (1990). In an attempt to investigate the effect of radiation and surface recombination on an ion implanted GaAs MESFET, S. Mishra et al., the authors of the above-titled paper, developed a closed-form analytical model of the device under illuminated condition. It is argued by the commenter that an incorrect I-V relation of the device in the illuminated condition was derived and that, therefore, the I-V relation obtained by the authors is incorrect. It is also suggested that a true I-V relation of the device in the illuminated condition can only be obtained after expressing the total charge explicitly as a function of channel voltage.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; electron-hole recombination; gallium arsenide; ion implantation; radiation effects; semiconductor device models; GaAs; I-V relation; an ion-implanted GaAs MESFET; channel voltage; closed-form analytical model; illuminated condition; radiation; surface recombination; total charge; Analytical models; Electron devices; Gallium arsenide; Ion implantation; MESFETs; Spontaneous emission; Surface treatment; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.97431

Filename

97431