Title :
Understanding Overreset Transition in Phase-Change Memory Characteristics
Author :
Calderoni, A. ; Ferro, M. ; Varesi, E. ; Fantini, P. ; Rizzi, M. ; Ielmini, D.
Author_Institution :
R&D Technol. Dev., Micron Technol., Inc., Agrate Brianza, Italy
Abstract :
In a phase-change memory (PCM), the overreset phenomenon, namely, the resistance decrease at pulse amplitudes well beyond the reset current, may affect the resistance window and the device noise margin. We characterized overreset states in PCM devices by electrical testing and electron microscopy. Our analysis shows that overreset programmed cell presents changes in the electronic band structure of the amorphous phase, with no degradation in the programmed amorphous volume.
Keywords :
electron microscopy; phase change memories; PCM devices; amorphous phase; electrical testing; electron microscopy; electronic band structure; noise margin; overreset programmed cell; overreset transition; phase-change memory characteristics; programmed amorphous volume; pulse amplitudes; reset current; Conductivity; Current measurement; IP networks; Phase change materials; Phase change memory; Programming; Resistance; Chalcogenide glass; nonvolatile memory; phase-change memory (PCM); threshold switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2202368
