A Depletion-Mode In–Ga–Zn–O Thin-Film Transistor Shift Register Embedded With a Full-Swing Level Shifter

Author

Kim, Binn ; Choi, Seung Chan ; Lee, Jeong-Soo ; Kim, Sun-Jae ; Jang, Yong-Ho ; Yoon, Soo-Young ; Kim, Chang-Dong ; Han, Min-Koo

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea

Volume

58

Issue

9

fYear

2011

Firstpage

3012

Lastpage

3017

Abstract

We proposed and fabricated the shift register embedded with a full-swing level shifter employing the depletion-mode In-Ga-Zn-O thin-film transistors (IGZO TFTs). In the level shifter, two clock signals with 180° out of phase and one start signal were employed to obtain a full-swing output. Also, the depletion-mode IGZO TFTs in the shift register were successfully turned off by employing two low-voltage-level signals. The level shifter and the shift register consist of six TFTs and one capacitor, and 11 TFTs, respectively. The depletion-mode IGZO TFT shift register embedded with a level shifter exhibited a high-voltage output pulse without any distortion. The power consumption is 2.13 mW at a VGH of 20 V, a VGL1 of -10 V, and a clock frequency of 12.5 kHz.

Keywords

gallium compounds; indium compounds; logic design; power integrated circuits; shift registers; thin film transistors; zinc compounds; capacitor; clock frequency; clock signals; depletion-mode IGZO TFT shift register; frequency 12.5 kHz; full-swing level shifter; high-voltage output pulse; power 2.13 mW; power consumption; thin-film transistor shift register; voltage -10 V; voltage 20 V; voltage-level signals; Clocks; Driver circuits; Logic gates; Low voltage; Shift registers; Thin film transistors; Depletion mode; In–Ga–Zn–O thin-film transistors (IGZO TFTs); full swing; level shifter; shift register;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2157926

Filename

5887402