DocumentCode :
1557013
Title :
TSV Stress-Aware Full-Chip Mechanical Reliability Analysis and Optimization for 3-D IC
Author :
Jung, Moongon ; Mitra, Joydeep ; Pan, David Z. ; Lim, Sung Kyu
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
31
Issue :
8
fYear :
2012
Firstpage :
1194
Lastpage :
1207
Abstract :
In this paper, we propose an efficient and accurate full-chip thermomechanical stress and reliability analysis tool and design optimization methodology to alleviate mechanical reliability issues in 3-D integrated circuits (ICs). First, we analyze detailed thermomechanical stress induced by through-silicon vias in conjunction with various associated structures such as landing pad and dielectric liner. Then, we explore and validate the linear superposition principle of stress tensors and demonstrate the accuracy of this method against detailed finite element analysis simulations. Next, we apply this linear superposition method to full-chip stress simulation and a reliability metric named the von Mises yield criterion. Finally, we propose a design optimization methodology to mitigate the mechanical reliability problems in 3-D ICs. Our numerical experimental results demonstrate the effectiveness of the proposed methodology.
Keywords :
finite element analysis; integrated circuit reliability; optimisation; tensors; thermomechanical treatment; three-dimensional integrated circuits; 3D IC; TSV stress-aware full-chip mechanical reliability analysis; TSV stress-aware full-chip mechanical reliability optimization; dielectric liner; finite element analysis simulations; full-chip thermomechanical reliability analysis tool; full-chip thermomechanical stress; landing pad; linear superposition method; linear superposition principle; mechanical reliability problem mitigation; optimization methodology; stress tensors; three-dimensional integrated circuits; through-silicon vias; von Mises yield criterion; Reliability; Silicon; Stress; Thermomechanical processes; Through-silicon vias; Young´s modulus; 3-D IC; mechanical reliability; stress; through-silicon via (TSV);
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2012.2188400
Filename :
6238396
Link To Document :
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