Title :
Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes
Author :
Gundlach, David J. ; Jia, LiLi ; Jackson, Thomas N.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
We have fabricated pentacene active layer organic thin film transistors (OTFTs) using chemically-modified source and drain contacts with improved contact and linear region characteristics. OTFTs fabricated on heavily doped, thermally oxidized single-crystal silicon substrates have linear field-effect mobility greater than 0.5 cm/sup 2//V-s at a drain-source voltage of -0.1 V, on/off current ratio greater than 10/sup 7/, and subthreshold slope as low as 0.7 V/decade.
Keywords :
carrier mobility; charge injection; flat panel displays; molecular electronics; organic semiconductors; surface treatment; thin film transistors; -0.1 V; OTFTs; Si; charge injection; chemically-modified drain contacts; chemically-modified source contacts; drain current; drain-source voltage; flat panel displays; heavily doped thermally oxidized single-crystal Si substrates; linear field-effect mobility; linear region characteristics; on/off current ratio; pentacene TFT; pentacene active layer organic thin film transistors; subthreshold slope; Electrodes; Flat panel displays; Organic chemicals; Organic semiconductors; Organic thin film transistors; Pentacene; Silicon; Substrates; Temperature; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
