Title :
4H-SiC RF power MOSFETs
Author :
Alok, D. ; Arnold, E. ; Egloff, R. ; Barone, J. ; Murphy, J. ; Conrad, R. ; Burke, J.
Author_Institution :
Philips Labs., North American Philips Corp., Briarcliff Manor, NY, USA
Abstract :
A 4H silicon carbide lateral RF MOSFET has been fabricated and characterized for the first time. The improved performance of this device was facilitated by a two-metal-layer process, which optimizes the conflicting requirements of acceptable inversion-layer mobility and low contact resistance. The cut-off frequency of the device with 1-μm gate length was in excess of 7 GHz.
Keywords :
contact resistance; inversion layers; microwave field effect transistors; microwave power transistors; power MOSFET; semiconductor device metallisation; silicon compounds; wide band gap semiconductors; 1 micron; 7 to 8 GHz; RF power MOSFETs; SiC; contact resistance; cut-off frequency; gate length; inversion-layer mobility; lateral MOSFET; two-metal-layer process; Annealing; Argon; Contact resistance; Furnaces; MOSFETs; Nitrogen; Oxidation; Radio frequency; Silicon carbide; Temperature;
Journal_Title :
Electron Device Letters, IEEE
