Analog device design for low power mixed mode applications in deep submicron CMOS technology

Analog device design in the deep sub-micron regime is particularly challenging due to conflicting device performance requirements and the circuit requirements in analog applications. It is shown that novel single pocket devices improve the intrinsic analog performance compared to the conventional super steep retrograde devices, within the constraints imposed by circuit requirements. The effect of gate oxide thickness variation on the analog performance of the novel single pocket and conventional super steep retrograde n-channel MOSFETs is also evaluated. It is shown that for constraints on power supply scaling, single pocket structures offer a better option for low-power analog applications.