Title :
A highly reliable trench DMOSFET employing self-align technique and hydrogen annealing
Author :
Jongdae Kim ; Tae Moon Roh ; Sang-Gi Kim ; Jin Ho Lee ; Kyoung-Ik Cho ; Young Il Kang
Author_Institution :
Adv. Micro-Electronics Res. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Abstract :
A novel process technique for fabricating trench double diffused MOSFETs (DMOSFET) using three mask layers is realized in order to obtain cost-effective production capability, higher cell density and current driving capability, and higher reliability. A unit cell with a cell pitch of 2.3/spl sim/2.4 μm and a channel density of 100 Mcell/in2 are obtained. Specific on-resistance is 0.36 m/spl Omega/.cm2 is obtained with a blocking voltage of 43 V. The highly reliable trench DMOSFET was obtained by the formation of the corner rounding of the hydrogen annealed trench surface.
Keywords :
annealing; power MOSFET; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; 2.3 to 2.4 micron; 43 V; blocking voltage; cell density; cell pitch; channel density; corner rounding; cost-effective production capability; current driving capability; high reliability; hydrogen annealing; mask layers; self-align technique; specific on-resistance; trench DMOSFET; trench double diffused MOSFETs; Annealing; Boron; Etching; Hydrogen; Ion implantation; MOSFETs; Moon; Ohmic contacts; Production; Voltage;
Journal_Title :
Electron Device Letters, IEEE
