A highly reliable trench DMOSFET employing self-align technique and hydrogen annealing

Author

Jongdae Kim ; Tae Moon Roh ; Sang-Gi Kim ; Jin Ho Lee ; Kyoung-Ik Cho ; Young Il Kang

Author_Institution

Adv. Micro-Electronics Res. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea

Volume

22

Issue

12

fYear

2001

Firstpage

594

Lastpage

596

Abstract

A novel process technique for fabricating trench double diffused MOSFETs (DMOSFET) using three mask layers is realized in order to obtain cost-effective production capability, higher cell density and current driving capability, and higher reliability. A unit cell with a cell pitch of 2.3/spl sim/2.4 μm and a channel density of 100 Mcell/in² are obtained. Specific on-resistance is 0.36 m/spl Omega/.cm² is obtained with a blocking voltage of 43 V. The highly reliable trench DMOSFET was obtained by the formation of the corner rounding of the hydrogen annealed trench surface.

Keywords

annealing; power MOSFET; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; 2.3 to 2.4 micron; 43 V; blocking voltage; cell density; cell pitch; channel density; corner rounding; cost-effective production capability; current driving capability; high reliability; hydrogen annealing; mask layers; self-align technique; specific on-resistance; trench DMOSFET; trench double diffused MOSFETs; Annealing; Boron; Etching; Hydrogen; Ion implantation; MOSFETs; Moon; Ohmic contacts; Production; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.974588

Filename

974588