• DocumentCode
    1557200
  • Title

    New method for extraction of MOSFET parameters

  • Author

    Jin He ; Xing Zhang ; Yangyuan Wang ; Ru Huang

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • Volume
    22
  • Issue
    12
  • fYear
    2001
  • Firstpage
    597
  • Lastpage
    599
  • Abstract
    A new method for the extraction of the MOSFET parameters is presented in this letter. The method, which relies on combining drain current and output conductance characteristics, enables reliable values of the threshold voltage V/sub th/, mobility μ0 and the mobility attenuation coefficient /spl theta/ to be obtained. Extracted results have been shown in good agreement with that of the second-derivative method, showing the validity of our presented method.
  • Keywords
    MOSFET; carrier mobility; electric admittance; semiconductor device models; semiconductor device testing; MOSFET parameter extraction; drain current characteristics; mobility; mobility attenuation coefficient; modeling; output conductance characteristics; second-derivative method; threshold voltage; Attenuation; Capacitance; Equations; Helium; MOSFET circuits; Microelectronics; Parameter extraction; Semiconductor devices; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.974590
  • Filename
    974590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1557200