Correction to "Poly-si TFT fabricated by laser-induced in-situ fluorine passivation and laser doping"

Volume

Issue

fYear

2001

Firstpage

606

Lastpage

606

Abstract

In the above-named letter [ibid., vol. 22, pp. 396??398, August 2001] Fig. 4 was incorrect. The corrected figure appears here.

Keywords

Active matrix liquid crystal displays; Air gaps; Doping; Passivation; Stress; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2001.974593

Filename

974593

Link To Document