Title :
Trends in DRAM dielectrics
Author :
Tang, K.S. ; Lau, W.S. ; Samudra, G.S.
fDate :
5/1/1997 12:00:00 AM
Abstract :
We trace the development of the ON/ONO dielectric film and examine the potential of new dielectrics with high dielectric constants such as Ta2O5 and ferroelectric materials. We also examine hemispherical grained (HSG) polysilicon, which is an innovative way to increase the effective area of the capacitor
Keywords :
DRAM chips; capacitors; dielectric thin films; ferroelectric thin films; permittivity; DRAM; ON/ONO dielectric film; Si; Ta2O5; capacitor; dielectric constant; ferroelectric material; hemispherical grained polysilicon; Capacitance; Capacitors; Chemical vapor deposition; Dielectric materials; Electrodes; Ferroelectric materials; High-K gate dielectrics; Oxidation; Random access memory; Silicon;
Journal_Title :
Circuits and Devices Magazine, IEEE
