Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC

Author

Tucker, Jesse B. ; Rao, Mulpuri V. ; Papanicolaou, Nicolas A. ; Mittereder, Jeff ; Elasser, Ahmed ; Clock, A. William ; Ghezzo, Mario ; Holland, O.W. ; Jones, Kenneth A.

Author_Institution

Gen. Electr. Corporate Res. & Dev., Niskayuna, NY, USA

Volume

48

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2665

Lastpage

2670

Abstract

Double implantation technology consisting of deep-range acceptor followed by shallow-range donor implantation was used to fabricate planar n⁺-p junction diodes in 4H-SiC. Either Al or B was used as the acceptor species and N as the donor species with all implants performed at 700°C and annealed at 1650°C with an AlN encapsulant. The diodes were characterized for their current-voltage (I-V) and capacitance-voltage (C-V) behavior over the temperature range 25°C-400°C, and reverse recovery transient behavior over the temperature range 25°C-200°C. At room temperature, the B-implanted diodes exhibited a reverse leakage current of 5×10^-8 A/cm² at a reverse bias of -20 V and a carrier lifetime of 7.4 ns

Keywords

aluminium; annealing; boron; carrier lifetime; ion implantation; leakage currents; nitrogen; semiconductor diodes; silicon compounds; wide band gap semiconductors; 1650 C; 25 to 200 C; 25 to 400 C; 4H-SiC; 700 C; AlN; AlN encapsulant; SiC:Al,N; SiC:B,N; annealing; capacitance-voltage characteristics; carrier lifetime; current-voltage characteristics; deep-range acceptor; double implantation technology; planar n-p junction diode; reverse leakage current; reverse recovery transient characteristics; shallow-range donor; Annealing; Clocks; Diodes; FETs; Implants; Ion implantation; Laboratories; Research and development; Silicon carbide; Temperature distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974687

Filename

974687