Title :
Metamorphic InP/InGaAs heterojunction bipolar transistors on GaAs substrate: DC and microwave performances
Author :
Wang, Hong ; Ng, Geok Ing ; Zheng, Haiqun ; Yang, Hong ; Xiong, Yongzhong ; Halder, Subratra ; Yuan, Kaihua ; Tan, Chee Leong ; Rahdakrishnan, K. ; Yoon, Soon Fatt
Author_Institution :
Microelectron. Center, Nanyang Technol. Univ., Singapore
fDate :
12/1/2001 12:00:00 AM
Abstract :
High-performance InP/In0.53Ga0.47As metamorphic heterojunction bipolar transistors (MHBTs) on GaAs substrate have been fabricated using InxGa1-xP strain relief buffer layer grown by solid-source molecular beam epitaxy (SSMBE). The MHBTs exhibited a dc current gain over 100, a unity current gain cutoff frequency (fT) of 48 GHz and a maximum oscillation frequency (fMAX) of 42 GHz with low junction leakage current and high breakdown voltages. It has also been shown that the MHBTs have achieved a minimum noise figure of 2 dB at 2 GHz (devices with 5×5 μm 2 emitter) and a maximum output power of 18 dBm at 2.5 GHz (devices with 5×20 μm2 emitter), which are comparable to the values reported on the lattice-matched HBTs (LHBTs). The dc and microwave characteristics show the great potential of the InP/InGaAs MHBTs on GaAs substrate for high-frequency and high-speed applications
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; microwave bipolar transistors; molecular beam epitaxial growth; semiconductor device breakdown; semiconductor device noise; 2 dB; 2 to 48 GHz; DC characteristics; DC current gain; GaAs; GaAs substrate; InxGa1-xP strain relief buffer layer; InGaP; InP-In0.53Ga0.47As; InP/InGaAs metamorphic heterojunction bipolar transistor; breakdown voltage; leakage current; maximum oscillation frequency; maximum output power; microwave characteristics; minimum noise figure; solid-source molecular beam epitaxy; unity current gain cutoff frequency; Buffer layers; Capacitive sensors; Cutoff frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Leakage current; Molecular beam epitaxial growth; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
