• DocumentCode
    1557520
  • Title

    Recessed gate-data line-crossover structures employing an air-gap to reduce signal delay for TFT-LCD panel

  • Author

    Park, Jin-Woo ; Song, In-Hyuk ; Lee, Min-Cheol ; Han, Min-Koo

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
  • Volume
    48
  • Issue
    12
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    2716
  • Lastpage
    2721
  • Abstract
    Two new line-crossover structures entitled "recessed air-bridge structure" and "recessed gate-line structure," which have improved mechanical durability and reduced data-tine signal delay in active matrix liquid crystal display (AMLCD) panel, have been proposed and fabricated. In the recessed air-bridge structure, the air-gap line-crossover is located at the bottom of the oxide trench so that the floated upper lines lie flush with the panel\´s surface. The recessed gate-line structure was fabricated by recessing the whole gate-line into the bottom of an oxide trench. Both of the fabricated structures, without any passivation layer, were proved sufficiently robust to withstand a rubbing process, which applied realistic mechanical stresses to the AMLCD panel. Experimental results show that the signal delays of the proposed structure are less than about 20% of the conventional structure
  • Keywords
    delays; field effect integrated circuits; flat panel displays; integrated circuit reliability; internal stresses; liquid crystal displays; mechanical testing; thin film transistors; AMLCD panel; TFT-LCD panel; active matrix liquid crystal display panel; air-gap line-crossover; data-line signal delay reduction; mechanical durability; mechanical reliability; mechanical rubbing process test; mechanical stresses; oxide trench; recessed air-bridge structure; recessed gate-data line-crossover structures; recessed gate-line structure; Active matrix liquid crystal displays; Air gaps; Capacitance; Delay; Fabrication; Mechanical factors; Planarization; Stress; Substrates; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.974695
  • Filename
    974695