Title :
On the modeling of the transient thermal behavior of semiconductor devices
Author :
Rinaldi, Niccolo
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Naples Univ., Italy
fDate :
12/1/2001 12:00:00 AM
Abstract :
A mathematical model of the transient temperature response of integrated devices is presented which takes into account the three-dimensional (3-D) nature of heat flow and the physical structure of the device. Simple analytical relations for the transient thermal impedance and thermal time constants are derived for the first time. The impact of device geometry on the transient thermal response curve is discussed, and simple guidelines for the thermal design of solid-state devices operated in transient or pulsed regime are given
Keywords :
semiconductor device models; semiconductor device packaging; temperature distribution; thermal resistance; transient response; analytical relations; device geometry; electrothermal effects; integrated devices; mathematical model; pulsed regime; semiconductor devices; thermal time constants; three-dimensional heat flow; transient temperature response; transient thermal behavior modeling; transient thermal impedance; Convolution; Fourier series; Impedance; Mathematical model; Semiconductor devices; Solid state circuits; Steady-state; Temperature; Thermal resistance; Transient analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
