On the modeling of the transient thermal behavior of semiconductor devices

Author

Rinaldi, Niccolo

Author_Institution

Dept. of Electron. & Telecommun. Eng., Naples Univ., Italy

Volume

48

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2796

Lastpage

2802

Abstract

A mathematical model of the transient temperature response of integrated devices is presented which takes into account the three-dimensional (3-D) nature of heat flow and the physical structure of the device. Simple analytical relations for the transient thermal impedance and thermal time constants are derived for the first time. The impact of device geometry on the transient thermal response curve is discussed, and simple guidelines for the thermal design of solid-state devices operated in transient or pulsed regime are given

Keywords

semiconductor device models; semiconductor device packaging; temperature distribution; thermal resistance; transient response; analytical relations; device geometry; electrothermal effects; integrated devices; mathematical model; pulsed regime; semiconductor devices; thermal time constants; three-dimensional heat flow; transient temperature response; transient thermal behavior modeling; transient thermal impedance; Convolution; Fourier series; Impedance; Mathematical model; Semiconductor devices; Solid state circuits; Steady-state; Temperature; Thermal resistance; Transient analysis;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974706

Filename

974706