DocumentCode
1557557
Title
Estimating lateral straggling of impurity profiles of ions implanted into crystalline silicon
Author
Suzuki, Kunihiro ; Sudo, Ritsuo ; Nagase, Masanori
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
48
Issue
12
fYear
2001
fDate
12/1/2001 12:00:00 AM
Firstpage
2803
Lastpage
2807
Abstract
We have developed an analytical model with lateral straggling parameters to describe the tilt dependence of ion-implantation profiles. We introduce three parameters associated with depth-dependent lateral straggling into the model. On the basis of comparison between experimental and analytical data, we have established a database of ion-implantation profiles that includes lateral-straggling parameters
Keywords
doping profiles; elemental semiconductors; energy loss of particles; ion implantation; secondary ion mass spectra; semiconductor process modelling; silicon; 20 to 160 keV; SIMS concentration profiles; Si:As; Si:B; Si:P; Si:Sb; analytical model; crystalline silicon; database; depth-dependent lateral straggling; ion-implantation profiles; lateral straggling parameters; tilt dependence; Amorphous materials; Analytical models; Crystallization; Data analysis; Databases; Helium; Impurities; Ion beams; Silicon; Two dimensional displays;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.974707
Filename
974707
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