Title :
Estimating lateral straggling of impurity profiles of ions implanted into crystalline silicon
Author :
Suzuki, Kunihiro ; Sudo, Ritsuo ; Nagase, Masanori
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
12/1/2001 12:00:00 AM
Abstract :
We have developed an analytical model with lateral straggling parameters to describe the tilt dependence of ion-implantation profiles. We introduce three parameters associated with depth-dependent lateral straggling into the model. On the basis of comparison between experimental and analytical data, we have established a database of ion-implantation profiles that includes lateral-straggling parameters
Keywords :
doping profiles; elemental semiconductors; energy loss of particles; ion implantation; secondary ion mass spectra; semiconductor process modelling; silicon; 20 to 160 keV; SIMS concentration profiles; Si:As; Si:B; Si:P; Si:Sb; analytical model; crystalline silicon; database; depth-dependent lateral straggling; ion-implantation profiles; lateral straggling parameters; tilt dependence; Amorphous materials; Analytical models; Crystallization; Data analysis; Databases; Helium; Impurities; Ion beams; Silicon; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
