Title :
High-speed CMOS circuit testing by 50 ps time-resolved luminescence measurements
Author :
Stellari, Franco ; Zappa, Franco ; Cova, Sergio ; Porta, Cristian ; Tsang, James C.
Author_Institution :
Dipt. di Elettronica e Inf., Politecnico di Milano, Italy
fDate :
12/1/2001 12:00:00 AM
Abstract :
Noninvasive characterization of CMOS ring oscillators with 50 ps resolution is obtained by exploiting the broad-band infrared emission from switching transistors. A fast silicon single-photon avalanche-diode (SPAD) is used to attain high sensitivity and time resolution. Switching transitions of both nand p-channel MOSFETs are measured and the main features in the circuit operation are characterized. Systematic variations and increased jitter of switching transitions due to phase noise are accurately measured
Keywords :
CMOS integrated circuits; MOSFET; ULSI; electroluminescence; high-speed integrated circuits; high-speed techniques; inspection; integrated circuit noise; integrated circuit testing; jitter; phase noise; time resolved spectroscopy; 20 GHz; 50 ps; 50 ps resolution; CMOS ring oscillator; PICA; ULSI; broad-band infrared emission; fast silicon single-photon avalanche-diode; high sensitivity; high-speed CMOS circuit testing; hot-electron luminescence; jitter; n-channel MOSFETs; noninvasive characterization; optical inspection technique; p-channel MOSFETs; phase noise; picosecond imaging for circuit analysis; switching transistors; time correlated photon counting; time resolution; time-resolved luminescence measurements; Circuit testing; Jitter; Luminescence; MOSFETs; Noise measurement; Phase measurement; Phase noise; Ring oscillators; Silicon; Switching circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
