An eight-phase CMOS injection locked ring oscillator with low phase noise

Author

Yousef, K. ; Jia, Hongjie ; Allam, A. ; Anand, A. ; Pokharel, R. ; Kaho, T.

Author_Institution

Electron. & Commun. Eng. Dept., Egypt-Japan Univ. of Sci. & Technol., Alex, Egypt

fYear

2014

fDate

1-3 Sept. 2014

Firstpage

337

Lastpage

340

Abstract

This paper presents the design of a low DC power, low phase noise single-ended ring oscillator (RO) in 0.18 μm CMOS technology. It introduces a new RO output phase control technique. This RO uses a voltage pull-down circuit to produce different output signal phases. The proposed RO employs the pulse injection (PI) technique for phase noise and spurious signals suppression. The proposed injection locked ring oscillator (ILRO) can be used for phase shift keying (PSK) implementation. The proposed ILRO has an oscillation frequency of 4.5 GHz with a fine tuning range of 540 MHz. It consumes only a 4.25 mW of power while having a phase noise of -130.9 dBc/Hz @ 1MHz offset. Through this ILRO design, a figure of merit (FoM) of -197.68 dBc/Hz has been achieved.

Keywords

CMOS integrated circuits; injection locked oscillators; integrated circuit design; integrated circuit noise; low-power electronics; phase noise; phase shift keying; RO output phase control; eight-phase CMOS injection locked ring oscillator; figure of merit; frequency 4.5 GHz; frequency 540 MHz; phase noise suppression; phase shift keying; power 4.25 mW; pulse injection technique; size 0.18 mum; spurious signals suppression; voltage pull-down circuit; CMOS integrated circuits; CMOS technology; Delays; Inverters; Phase noise; Ring oscillators; CMOS phase noise; injection locked ring oscillator (ILRO); pulse injection (PI); ring oscillator (RO); spurious signals; voltage pull-down;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-WideBand (ICUWB), 2014 IEEE International Conference on

Conference_Location

Paris

Type

conf

DOI

10.1109/ICUWB.2014.6959003

Filename

6959003