Title :
Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements
Author :
Chen, Chih-Hung ; Deen, M. Jamal ; Cheng, Yuhua ; Matloubian, Mishel
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
fDate :
12/1/2001 12:00:00 AM
Abstract :
An extraction method to obtain the induced gate noise (i¯g¯2¯) channel noise (i¯d¯2¯), and their cross correlation (i¯g¯i¯d¯*¯) in submicron MOSFETs directly from scattering and RF noise measurements has been presented and verified by measurements. In addition, the extracted induced gate noise, channel noise, and their correlation in MOSFETs fabricated in 0.18-μm CMOS process versus frequencies, bias conditions, and channel lengths are presented and discussed
Keywords :
MOSFET; S-parameters; semiconductor device measurement; semiconductor device noise; 0.18 micron; CMOS process; RF noise measurement; channel noise; cross-correlation; induced gate noise; parameter extraction; scattering measurement; submicron MOSFET; CMOS process; Circuit noise; Data mining; Electrical resistance measurement; MOSFETs; Noise figure; Noise measurement; Radio frequency; Scattering; Semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
