Low frequency noise versus temperature spectroscopy of recently designed Ge JFETs

Author

Grassi, Valerio ; Colombo, Carlo Francesco ; Camin, Daniel V.

Author_Institution

Dipt. di Fisica, Ist. Nazionale di Fisica Nucl., Milan, Italy

Volume

48

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2899

Lastpage

2905

Abstract

During the investigation of cryogenic properties of recently developed Ge JFETs we have applied the technique known in literature as low frequency noise versus temperature spectroscopy (LFN versus T). Using this method we have determined the energy levels of traps associated to Lorentzian noise found in the 30 to 40 K temperature range. To perform this task we have developed a computer-controlled experimental setup able to set the temperature within ±5 mK in the range 4 to 300 K during a spectral noise measurement. An approach for the calculation of the uncertainties that affect the evaluation of traps parameter is presented

Keywords

cryogenic electronics; electron traps; elemental semiconductors; germanium; junction gate field effect transistors; semiconductor device measurement; semiconductor device noise; 30 to 40 K; 4 to 300 K; Ge; Ge JFET; Lorentzian noise; computer-controlled measurement; cryogenic properties; low frequency noise versus temperature spectroscopy; spectral noise; trap energy levels; Electron traps; Energy states; FETs; JFETs; Low-frequency noise; Noise level; Noise measurement; Performance evaluation; Spectroscopy; Temperature distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974725

Filename

974725