Title :
Experimental investigation of linear amplification characteristics of radio-frequency thin-film SOI power MOSFETs
Author :
Matsumoto, Satoshi ; Sakai, Tatsuo
Author_Institution :
NTT Telecommun. Energy Labs., Kanagawa, Japan
fDate :
12/1/2001 12:00:00 AM
Abstract :
Linear amplification characteristics of RF thin-film SOI power MOSFETs have been investigated under π/4 shift quadrature phase shift keying (QPSK) modulation. They were found to depend on both the gate and drain bias conditions. There are optimum bias conditions which give the best linear amplification characteristics. They were also found to depend on the pattern layout and gate electrode resistivity. A shorter finger length and lower gate resistance resulted in good linear amplification characteristics. The linear amplification characteristics were independent of the substrate resistivity
Keywords :
power MOSFET; quadrature phase shift keying; silicon-on-insulator; thin film transistors; RF thin film SOI power MOSFET; drain bias; finger length; gate bias; gate electrode resistivity; linear amplification characteristics; pattern layout; quadrature phase shift keying modulation; substrate resistivity; Cellular phones; Conductivity; Electrodes; Fabrication; MMICs; MOSFETs; Radio frequency; Substrates; Thin film devices; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
