Analysis of bipolar junction transistors with a Gaussian base-dopant impurity-concentration profile

Author

Li, Guoxin ; Neugroschel, Arnost ; Sah, Chih-Tang ; Hemmenway, Don ; Rivoli, Tony ; Maddux, Jay

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

48

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2945

Lastpage

2947

Abstract

A method for a quantitative charge-control analysis of bipolar base-junction transistors with a Gaussian dopant impurity-concentration profile is demonstrated. Analytical expressions for the base transit time are given for two different Gaussian impurity-concentration profiles with the peak concentration at the edge, and within the quasi-neutral base layer. It is also shown that approximating the Gaussian profile by a simple exponential profile results in only an insignificant error in the charge-control analysis

Keywords

Gaussian distribution; bipolar transistors; doping profiles; Gaussian base dopant impurity concentration profile; base transit time; bipolar junction transistor; charge control analysis; exponential profile; quasi-neutral base layer; Acceleration; Doping profiles; Gaussian processes; Heterojunction bipolar transistors; Impurities; Ion implantation; Nonuniform electric fields; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974733

Filename

974733