Title :
Analysis of bipolar junction transistors with a Gaussian base-dopant impurity-concentration profile
Author :
Li, Guoxin ; Neugroschel, Arnost ; Sah, Chih-Tang ; Hemmenway, Don ; Rivoli, Tony ; Maddux, Jay
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
A method for a quantitative charge-control analysis of bipolar base-junction transistors with a Gaussian dopant impurity-concentration profile is demonstrated. Analytical expressions for the base transit time are given for two different Gaussian impurity-concentration profiles with the peak concentration at the edge, and within the quasi-neutral base layer. It is also shown that approximating the Gaussian profile by a simple exponential profile results in only an insignificant error in the charge-control analysis
Keywords :
Gaussian distribution; bipolar transistors; doping profiles; Gaussian base dopant impurity concentration profile; base transit time; bipolar junction transistor; charge control analysis; exponential profile; quasi-neutral base layer; Acceleration; Doping profiles; Gaussian processes; Heterojunction bipolar transistors; Impurities; Ion implantation; Nonuniform electric fields; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
