Title :
Growth of ultrahigh carbon-doped InGaAs and its application to InP/InGaAs(C) HBTs
Author :
Han, Jae-Chun ; Song, Jong-In ; Park, Sung-Woong ; Woo, Deokha
Author_Institution :
Dept. of Inf. & Commun., Kwangju Inst. of Sci. & Technol., South Korea
fDate :
1/1/2002 12:00:00 AM
Abstract :
Growth of ultrahigh carbon-doped p-type InGaAs lattice matched to InP by chemical beam epitaxy (CBE) using carbon tetrabromide (CBr4 ) as a doping source was investigated. Effects of growth temperature, group V supply pressure, and CBr4 supply pressure on growth rate, composition, mobility, and hole concentration of carbon-doped InGaAs were studied. Ultrahigh net hole concentration and room-temperature mobility of 2 × 1020/cm3 and 33 cm2/V·sec, respectively, were achieved. Mobility of the ultrahigh carbon-doped InGaAs using CBr4 compared favorably to those of CBE grown carbon-doped InGaAs using carbon tetrachloride (CCl4) and molecular beam epitaxy grown beryllium (Be)-doped InGaAs grown at low temperature. The highly carbon-doped InGaAs layers grown by CBE using CBr4 as a doping source showed a negligible hydrogen passivation effect and were used for the growth of high-performance, highly carbon-doped base InP/InGaAs heterojunction bipolar transistor epitaxial layer structures
Keywords :
Hall mobility; III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; hole density; indium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; HBT; Hall mobility; InGaAs:C; InP-InGaAs:C; carbon tetrabromide supply pressure; chemical beam epitaxy; group V supply pressure; growth rate; growth temperature; hole concentration; lattice matched layer; room-temperature mobility; ultrahigh carbon-doped p-type layer; Chemicals; Doping; Epitaxial growth; Hydrogen; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Passivation; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
