Title :
Novel SOI p-channel MOSFETs with higher strain in si channel using double SiGe heterostructures
Author :
Mizuno, Tomohisa ; Sugiyama, Naoharu ; Tezuka, Tsutomu ; Takagi, Shin-ichi
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
fDate :
1/1/2002 12:00:00 AM
Abstract :
We have studied p-channel advanced SOI MOSFETs using double SiGe heterostructures fabricated by the combination of SIMOX and high-quality strained-Si/SiGe regrowth technologies, in order to introduce higher strain in Si channel. It was revealed that this double SiGe structure of second Si0.82Ge0.18Si0.93Ge0.07 allows the second SiGe layer to relax by about 70%, because of the elastic energy balance between the second and the first-SiGe layers. As a result, the strain of Si layer on this double SiGe structure becomes higher than that of the single SiGe structure. Strained SOI p-MOSFETs using the double layer SiGe structure exhibited higher hole mobility than that of strained-SOI MOSFETs with single Si0.9Ge0.1 structure. The hole mobility enhancement of 30% and 45% was achieved in the strained-SOI MOSFETs with double SiGe structures, compared to that of the universal curve and the control-SOI MOSFETs, respectively
Keywords :
Ge-Si alloys; MOSFET; Raman spectra; SIMOX; annealing; buried layers; hole mobility; Raman spectrum; SIMOX; Si-SiO2; SiGe-SiGe; TEM; annealing temperature; buried layer; double heterostructures; elastic energy balance; high-quality strained-layers regrowth; high-speed CMOS; hole mobility; p-channel SOI MOSFETs; universal curve; Annealing; Capacitive sensors; Electron mobility; Germanium silicon alloys; MOSFET circuits; Raman scattering; Silicon germanium; Strain control; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
