Preparation of thin-film transistors with chemical bath deposited CdSe and CdS thin films

Author

Gan, F.Y. ; Shih, I.

Author_Institution

McGill Univ., Montreal, Que., Canada

Volume

49

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

15

Lastpage

18

Abstract

The authors have fabricated the thin-film transistor (TFT) with CdSe and CdS semiconductor thin films, prepared by a low temperature chemical bath deposition (CBD) method, as an active layer. The ON-current values of the CdSe-TFTs and CdS-TFTs at a gate bias of 10 V and a source-drain voltage of 10 V are about 100 μA and 5 μA, respectively. The OFF-current values of the CdSe-TFTs and CdS-TFTs at the source-drain voltage of 10 V are less than 10 pA. The fabricated CdSe-TFTs exhibited a field effect mobility of 15 cm²/V-s, threshold voltage of 3.5 V, subthreshold slope of 0.5 V/dec., and ON/OFF current ratios exceed 10⁷. A field effect mobility of I cm ²/V-s, a threshold voltage of 2.6 V, a subthreshold slope of 0.6 V/dec., and an ON/OFF current ratios exceed 10⁶ were observed for CdS TFTs

Keywords

II-VI semiconductors; cadmium compounds; liquid phase deposited coatings; liquid phase deposition; semiconductor growth; semiconductor thin films; thin film transistors; 10 V; 100 muA; 5 muA; CdS; CdSe; controllable chemical reaction; deposition temperature; etching process; field effect mobility; inverted staggered-electrode structure; low temperature chemical bath deposition; photolithographic pattering; relative reactant concentrations; semiconductor thin films; sharp transfer characteristic; solution pH value; source-drain voltage; thermal diffusion process; thin-film transistor preparation; threshold voltage; Chemicals; Diffusion processes; Etching; Fabrication; Semiconductor films; Semiconductor thin films; Sputtering; Temperature; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974742

Filename

974742