DocumentCode :
1557696
Title :
Temperature behavior of visible and infrared electroluminescent devices fabricated on erbium-doped GaN
Author :
Garter, Michael J. ; Steckl, Andrew J.
Author_Institution :
Nanoelectronics Lab., Cincinnati Univ., OH, USA
Volume :
49
Issue :
1
fYear :
2002
fDate :
1/1/2002 12:00:00 AM
Firstpage :
48
Lastpage :
54
Abstract :
Visible and infrared (IR) rare-earth-activated light emission has been obtained from Er-doped GaN electroluminescent devices (ELD). The ELD consists of an in-situ Er-doped GaN layer grown on either a sapphire or silicon (Si) substrate. The temperature dependence of the light emission and the current conduction is reported. The EL spectrum shows two main visible peaks at 537 and 558 nm and a group of closely spaced IR peaks clustered around 1550 nm. The 558 nm visible transition is dominant below 250 K, whereas the 537 nm transition is dominant at higher temperature peaking at 300 K. Temperatures from 240-500 K have minimal effect on IR emission intensity. A simple model consisting of two back-to-back Schottky diodes explains the current-voltage dependence. The effect of Er doping and substrate type on carrier transport is investigated as a function of voltage and temperature. Specifically, there is evidence that an Er-related defect is responsible for carrier generation at temperatures above 300 K. The effect of bias polarity on spatial confinement of the light emission in different areas of the devices is discussed. The model indicates that both electric field intensity and current density are important in producing light emission. The model also accounts for the uniformity of the emission under the electrodes when considering the type of substrate used for GaN:Er device growth
Keywords :
III-V semiconductors; Schottky diodes; current density; electroluminescent devices; electron traps; equivalent circuits; erbium; gallium compounds; semiconductor device models; wide band gap semiconductors; 1550 nm; 240 to 500 K; 537 nm; 558 nm; EL spectrum; Er doping effect; GaN:Er; IR electroluminescent devices; back-to-back Schottky diodes; carrier transport; current density; current-voltage dependence; electric field intensity; electron trap; emission uniformity; equivalent circuit; model; rare-earth-activated light emission; sapphire substrate; silicon substrates; substrate type; temperature dependence; visible electroluminescent devices; Doping; Electroluminescence; Electroluminescent devices; Erbium; Gallium nitride; Schottky diodes; Semiconductor process modeling; Silicon; Temperature dependence; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.974748
Filename :
974748
Link To Document :
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