A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs

Author

Sánchez, Francisco J García ; Ortiz-Conde, Adelmo ; Cerdeira, Antonio ; Estrada, Magali ; Flandre, Denis ; Liou, Juin J.

Author_Institution

Laboratorio de Electronica del Estado Solido, Univ. Simon Bolivar, Caracas, Venezuela

Volume

49

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

82

Lastpage

88

Abstract

Free-carrier mobility degradation in the channel and drain/source series resistance are two important parameters limiting the performance of MOS devices. In this paper, we present a method to extract these parameters from the drain current versus gate voltage characteristics of fully-depleted (FD) SOI MOSFETs operating in the saturation region. This method is developed based on an integration function which reduces errors associated with the extraction procedure and on the DC characteristics of MOS devices having several different channel lengths. Simulation results and measured data of FD SOI MOSFETs are used to test and verify the method developed

Keywords

MOSFET; carrier mobility; electric resistance; semiconductor device models; silicon-on-insulator; DC characteristics; MOS device channel lengths; Si; drain current versus gate voltage characteristics; drain/source series resistance; free-carrier mobility degradation; fully-depleted SOI MOSFETs; integration function; parameter extraction; saturation region; threshold voltage; total series resistance; velocity saturation; Circuit simulation; Data mining; Degradation; Electrical resistance measurement; Electronic mail; MOS devices; MOSFETs; Parameter extraction; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974753

Filename

974753