Quasi-two-dimensional transmission line model (QTD-TLM) for planar ohmic contact studies

Author

Chor, E.F. ; Lerdworatawee, Jongrit

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

49

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

105

Lastpage

111

Abstract

An analytical quasi-two-dimensional transmission tine model (QTD-TLM) has been formulated to more accurately extract the specific contact resistance (ρ_c) of ohmic contacts than the conventional one-dimensional TLM (1D-TLM). Similar to 1D-TLM, the extraction of ρ_c using QTD-TLM is straightforward. By means of the conformal mapping technique, the two-dimensional (2-D) (or lateral) current flow and current crowding, owing to the presence of a gap between the TLM mesa and contacts, are jointly incorporated into our model using a single shunt resistor. QTD-TLM is generalized as it is applicable to a variety of contact dimensions and gap widths, and to both alloyed and nonalloyed contacts. The validity of QTD-TLM has been verified experimentally using two alloyed and two nonalloyed ohmic contacts, and by comparison with results from a 2-D numerical model

Keywords

contact resistance; ohmic contacts; semiconductor device models; semiconductor-metal boundaries; transmission line theory; 2D current flow; alloyed contacts; conformal mapping technique; contact dimensions; current crowding; gap widths; lateral current flow; metal/semiconductor ohmic contact; nonalloyed contacts; planar ohmic contacts; quasi-2D transmission line model; quasi-two-dimensional TLM; single shunt resistor; specific contact resistance; Analytical models; Conformal mapping; Contact resistance; Electric resistance; Electrical resistance measurement; Numerical models; Ohmic contacts; Planar transmission lines; Proximity effect; Resistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974756

Filename

974756