Title :
Essential physics of carrier transport in nanoscale MOSFETs
Author :
Lundstrom, Mark ; Ren, Zhibin
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
1/1/2002 12:00:00 AM
Abstract :
The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model
Keywords :
MOSFET; high field effects; impurity scattering; nanotechnology; semiconductor device models; ballistic MOSFET; carrier transport; charge carrier processes; charge control; device physics; nanoscale MOSFETs; numerical simulations; scattering model; semiconductor device modeling; source velocity saturation; thermal injection; transistors; ultrasmall devices; Backscatter; Electrostatics; MOSFETs; Nanoscale devices; Numerical simulation; Particle scattering; Physics; Quantum mechanics; Steady-state; Velocity control;
Journal_Title :
Electron Devices, IEEE Transactions on
