Title :
Lateral thin-film Schottky (LTFS) rectifier on SOI: a device with higher than plane parallel breakdown voltage
Author :
Singh, Yashvir ; Kumar, M. Jagadesh
Author_Institution :
Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi, India
fDate :
1/1/2002 12:00:00 AM
Abstract :
In this work, we report a lateral thin-film Schottky (LTFS) rectifier on a highly doped SOI epitaxial layer. Based on two-dimensional (2-D) numerical simulations, we demonstrate for the first time that, for an epitaxial doping of 1017 cm-3 , breakdown voltages as large as 60 V (about six times higher than the plane parallel breakdown voltage) can be achieved using the proposed structure with very low reverse leakage current. Further, the forward voltage drop of the proposed device is shown to be as low as 0.27 V even at a current density 100 A/cm2. The reasons for improved performance of the LTFS rectifier are analyzed and the effects of film thickness, Schottky barrier height, and the Si-SiO2 interface states on the device performance are also reported
Keywords :
Schottky barriers; Schottky diodes; heavily doped semiconductors; interface states; leakage currents; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; solid-state rectifiers; thin film devices; 0.27 V; 2D numerical simulations; 60 V; LTFS rectifier; Schottky barrier height; Si-SiO2; Si-SiO2 interface states; barrier lowering; breakdown voltages; epitaxial doping; film thickness; forward voltage drop; highly doped SOI epitaxial layer; lateral thin-film Schottky rectifier; low reverse leakage current; Current density; Doping; Epitaxial layers; Leakage current; Numerical simulation; Rectifiers; Thin film devices; Transistors; Two dimensional displays; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
