Lateral thin-film Schottky (LTFS) rectifier on SOI: a device with higher than plane parallel breakdown voltage

Author

Singh, Yashvir ; Kumar, M. Jagadesh

Author_Institution

Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi, India

Volume

49

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

181

Lastpage

184

Abstract

In this work, we report a lateral thin-film Schottky (LTFS) rectifier on a highly doped SOI epitaxial layer. Based on two-dimensional (2-D) numerical simulations, we demonstrate for the first time that, for an epitaxial doping of 10¹⁷ cm^-3, breakdown voltages as large as 60 V (about six times higher than the plane parallel breakdown voltage) can be achieved using the proposed structure with very low reverse leakage current. Further, the forward voltage drop of the proposed device is shown to be as low as 0.27 V even at a current density 100 A/cm². The reasons for improved performance of the LTFS rectifier are analyzed and the effects of film thickness, Schottky barrier height, and the Si-SiO₂ interface states on the device performance are also reported

Keywords

Schottky barriers; Schottky diodes; heavily doped semiconductors; interface states; leakage currents; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; solid-state rectifiers; thin film devices; 0.27 V; 2D numerical simulations; 60 V; LTFS rectifier; Schottky barrier height; Si-SiO₂; Si-SiO₂ interface states; barrier lowering; breakdown voltages; epitaxial doping; film thickness; forward voltage drop; highly doped SOI epitaxial layer; lateral thin-film Schottky rectifier; low reverse leakage current; Current density; Doping; Epitaxial layers; Leakage current; Numerical simulation; Rectifiers; Thin film devices; Transistors; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974767

Filename

974767