Title :
Ge-profile design for improved linearity of SiGe double HBTs
Author :
Malm, B. Gunnar ; Östling, Mikael
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
Abstract :
The influence of Ge-profile design on SiGe HBT linearity-harmonic distortion has been quantified using finite element physical device simulation. It was demonstrated that proper Ge-profile tailoring allows the linearity to be improved for both low- and high-current operation. High injection heterojunction barrier effects are shown to have a significant influence on the higher order harmonics. The influence of the Ge-profile design on linearity was found to be comparable to the influence from the epitaxial collector doping profile.
Keywords :
Ge-Si alloys; doping profiles; finite element analysis; harmonic distortion; heterojunction bipolar transistors; low-power electronics; microwave bipolar transistors; semiconductor device models; semiconductor materials; Ge-profile design; SiGe; double HBTs; epitaxial collector doping profile; finite element physical device simulation; heterojunction barrier effects; high-current operation; higher order harmonics; linearity-harmonic distortion; low-current operation; profile tailoring; Doping profiles; Finite element methods; Germanium silicon alloys; Harmonic distortion; Heterojunction bipolar transistors; High power amplifiers; Linearity; Power system harmonics; Semiconductor process modeling; Silicon germanium;
Journal_Title :
Electron Device Letters, IEEE
