Title :
Impact of intrinsic channel resistance on noise performance of CMOS LNA
Author :
Chen, Jiwei ; Shi, Bingxue
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Channel resistance cannot be neglected for CMOS circuits that operate at radio frequency (RF), especially for a low noise amplifier (LNA), which is a very important block in CMOS RF transceivers. The impact of channel resistance on the noise performance of an LNA is thoroughly studied and analyzed and new formulas are proposed systematically in this work. Furthermore, a revised noise figure optimization technique is discussed. Simulation results are also proposed. All of this work will be very instructive for the design of high-performance LNA.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; electric resistance; impedance matching; integrated circuit noise; 2.4 GHz; CMOS LNA; CMOS RF transceiver; RF operation; input impedance match; intrinsic channel resistance; low noise amplifier; noise figure optimization technique; noise performance; radiofrequency operation; CMOS technology; Circuit noise; Geometry; Impedance; Low-noise amplifiers; Noise figure; Performance analysis; Radio frequency; Radiofrequency amplifiers; Transceivers;
Journal_Title :
Electron Device Letters, IEEE
