Determining the onset frequency of nonquasistatic effects of the MOSFET in AC simulation

Author

Ng, Allen F -L ; Ko, Ping K. ; Chan, Mansun

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

23

Issue

1

fYear

2002

Firstpage

37

Lastpage

39

Abstract

The frequency dependence of nonquasistatic (NQS) operation in MOS transistors is studied. With the help of a two-dimensional device simulator, a time varying sine function is applied to the gate at different frequencies. The inversion channel charge variation in response to the input signal at high frequency is compared with that at dc. By observing the frequency that generates an observable delay in channel charge response to the applied signal, the onset frequency of the NQS effect can be determined, which gives a limit to the valid quasistatic (QS) assumption. It was found that the onset frequency of the NQS effect is very close to f/sub T/, the unity gain frequency of a transistor, and the QS approximation is sufficient for most of the practical applications.

Keywords

MOSFET; UHF field effect transistors; delays; inversion layers; microwave field effect transistors; semiconductor device models; AC simulation; MOSFET; NQS effect; applied signal; channel charge response; input signal; inversion channel charge variation; nonquasistatic operation; observable delay; onset frequency; time varying sine function; two-dimensional device simulator; unity gain frequency; valid quasistatic assumption; CMOS technology; Circuit simulation; Continuous improvement; Delay effects; Frequency dependence; Guidelines; MOSFET circuits; Radio frequency; Semiconductor device modeling; Signal generators;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.974805

Filename

974805