Reflection-type optical waveguide switch with bow-tie electrode

Author

Li, Baojun ; Chua, Soo-jin

Author_Institution

Singapore-MIT Alliance, Nat. Univ. of Singapore, Singapore

Volume

20

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

65

Lastpage

70

Abstract

Based on the total internal reflection and the plasma dispersion effect of SiGe alloy, an intersectional rib optical waveguide switch with bow-tie electrode has been proposed and fabricated for operating wavelengths of 1.3 and 1.55 μm. The thickness of the SiGe layer is 2.6 μm and the width is 9 μm. The branch angle of the switch is 2° and the bow-tie angle is 1.5°. The crosstalks are -19.6 dB for 1.3 μm and -21.8 dB for 1.55 μm. At both wavelengths, the extinction ratio is larger than 38.5 dB and the insertion loss is less than 1.70 dB. The switching time is about 180 ns

Keywords

Ge-Si alloys; electrodes; integrated optics; light reflection; optical crosstalk; optical losses; optical switches; optical waveguide components; semiconductor materials; 1.3 micron; 1.55 micron; 1.7 dB; 180 ns; 2.6 micron; 9 micron; Si; SiGe alloy; SiGe layer thickness; SiGe-Si; bow-tie angle; bow-tie electrode; branch angle; crosstalks; extinction ratio; insertion loss; integrated optics; intersectional rib optical waveguide switch; operating wavelengths; optical switch; optoelectronic device; plasma dispersion effect; reflection-type optical waveguide switch; switching time; total internal reflection; Crosstalk; Dispersion; Electrodes; Extinction ratio; Germanium silicon alloys; Optical reflection; Optical switches; Optical waveguides; Plasma waves; Silicon germanium;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.974819

Filename

974819