• DocumentCode
    1557896
  • Title

    Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specifications

  • Author

    Degraeve, Robin ; Kaczer, Ben ; De Keersgieter, An ; Groeseneken, Guido

  • Author_Institution
    IMEC, Leuven, Belgium
  • Volume
    1
  • Issue
    3
  • fYear
    2001
  • fDate
    9/1/2001 12:00:00 AM
  • Firstpage
    163
  • Lastpage
    169
  • Abstract
    A method to determine the breakdown position in short channel nMOSFETs is introduced. We find that soft breakdown occurs exclusively in the transistor channel, while the hardest circuit-killing breakdowns occur above the source and drain extension regions. Since these breakdowns make up only a small fraction of all breakdowns, a relaxation of the reliability specification is possible
  • Keywords
    MOSFET; semiconductor device breakdown; semiconductor device reliability; breakdown location; breakdown mode; hard breakdown; oxide reliability; short-channel nMOSFET; soft breakdown; Breakdown voltage; CMOS process; Digital circuits; Electric breakdown; Extrapolation; Low voltage; MOSFETs; Predictive models; Stress; Testing;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/7298.974832
  • Filename
    974832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1557896