Title :
Embedded Flash on a Low-Power 65-nm Logic Technology
Author :
Fong, S. ; Ariyoshi, J. ; Ema, T.
Author_Institution :
Lattice Semicond. Inc., San Jose, CA, USA
Abstract :
We have successfully integrated an embedded Flash technology into a 65-nm leading-edge logic technology. We have also optimized the logic transistor characteristics to achieve an extremely low standby current suitable for consumer applications.
Keywords :
field programmable gate arrays; flash memories; low-power electronics; embedded flash memory; embedded flash technology; field-programmable gate arrays; leading-edge logic technology; logic transistor characteristics; low-power logic technology; size 65 nm; Arrays; Implants; Leakage current; Logic gates; MOS devices; Programming; Transistors; Embedded Flash memory; field-programmable gate arrays; low power;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2204950
