• DocumentCode
    1557998
  • Title

    Aspects of the design of low noise, negative resistance, reflection mode transistor amplifiers

  • Author

    Gardner, Peter ; Paul, Dipak K.

  • Author_Institution
    Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
  • Volume
    39
  • Issue
    11
  • fYear
    1991
  • fDate
    11/1/1991 12:00:00 AM
  • Firstpage
    1869
  • Lastpage
    1875
  • Abstract
    The authors consider the use of microwave transistors in the negative resistance reflection mode and present the conditions for optimum noise performance. Possible advantages include the possibility of higher gain in the millimeter-wave region, which can be achieved by absorbing the parasitic common lead inductance into the feedback circuit designed to generate the negative resistance, and the existence of a failsafe mode of operation, in that the failure of the active device or its power supply is likely to lead a low return loss, resulting in a small insertion loss through the amplifiers, which may permit continued, although degraded, system operation. The latter potential advantage has proved to be of interest to radar system designers
  • Keywords
    electron device noise; feedback; field effect transistor circuits; microwave amplifiers; negative resistance; solid-state microwave circuits; LNA; failsafe operation mode; feedback circuit; low noise design; microwave transistors; millimeter-wave region; negative resistance; optimum noise performance; parasitic common lead inductance; reflection mode; transistor amplifiers; Acoustic reflection; Circuit noise; Feedback circuits; High power microwave generation; Inductance; Microwave transistors; Millimeter wave circuits; Millimeter wave radar; Millimeter wave transistors; Power generation;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.97488
  • Filename
    97488