DocumentCode
1557998
Title
Aspects of the design of low noise, negative resistance, reflection mode transistor amplifiers
Author
Gardner, Peter ; Paul, Dipak K.
Author_Institution
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
Volume
39
Issue
11
fYear
1991
fDate
11/1/1991 12:00:00 AM
Firstpage
1869
Lastpage
1875
Abstract
The authors consider the use of microwave transistors in the negative resistance reflection mode and present the conditions for optimum noise performance. Possible advantages include the possibility of higher gain in the millimeter-wave region, which can be achieved by absorbing the parasitic common lead inductance into the feedback circuit designed to generate the negative resistance, and the existence of a failsafe mode of operation, in that the failure of the active device or its power supply is likely to lead a low return loss, resulting in a small insertion loss through the amplifiers, which may permit continued, although degraded, system operation. The latter potential advantage has proved to be of interest to radar system designers
Keywords
electron device noise; feedback; field effect transistor circuits; microwave amplifiers; negative resistance; solid-state microwave circuits; LNA; failsafe operation mode; feedback circuit; low noise design; microwave transistors; millimeter-wave region; negative resistance; optimum noise performance; parasitic common lead inductance; reflection mode; transistor amplifiers; Acoustic reflection; Circuit noise; Feedback circuits; High power microwave generation; Inductance; Microwave transistors; Millimeter wave circuits; Millimeter wave radar; Millimeter wave transistors; Power generation;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.97488
Filename
97488
Link To Document