Title :
Characterization of resonant tunneling diodes for microwave and millimeter-wave detection
Author :
Mehdi, I. ; East, J.R. ; Haddad, G.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
11/1/1991 12:00:00 AM
Abstract :
The authors report on the direct detection capabilities of resonant tunneling diodes in the 10-100 GHz range. An open circuit voltage sensitivity of 1750 mV/mW (in Ka-band) was measured. This is higher than the sensitivity of comparatively based commercially available solid-state detectors. The detector properties are a strong function of diode bias and the measured tangential signal sensitivity (-32 dBm at Ka-band with 1-MHz bandwidth) and the dynamic range (25 dB) of the diode are smaller compared to other solid-state detectors
Keywords :
equivalent circuits; microwave detectors; resonant tunnelling devices; sensitivity analysis; tunnel diodes; 1 MHz; 10 to 100 GHz; EHF; Ka-band; MM-wave type; RTD; SHF; diode bias; direct detection capabilities; millimeter-wave detection; open circuit voltage sensitivity; resonant tunneling diodes; solid-state detectors; Detectors; Equivalent circuits; Etching; Inductance; Millimeter wave circuits; Resonant tunneling devices; Schottky diodes; Solid state circuits; Substrates; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
