Title :
A technique for correction of parasitic capacitance on microwave ft measurements of MESFET and HEMT devices
Author :
Feng, Milton ; Lau, C.L. ; Ito, C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
11/1/1991 12:00:00 AM
Abstract :
A technique for determining the parasitic capacitance attributed to device layout geometry is described. This simple technique requires only on-wafer, cascade probe measurements on devices with varying gate widths. This technique will assist in the optimization of device layout design and in improving modeling performance for microwave and millimeter-wave applications
Keywords :
Schottky gate field effect transistors; capacitance measurement; high electron mobility transistors; microwave measurement; semiconductor device testing; solid-state microwave devices; HEMT; MESFET; cascade probe measurements; current gain cutoff frequency; device layout geometry; millimeter-wave applications; parasitic capacitance; Calibration; Capacitance measurement; Current measurement; Equations; HEMTs; MESFETs; Microwave devices; Microwave measurements; Microwave theory and techniques; Parasitic capacitance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
