DocumentCode
1558169
Title
A method to improve the efficiency of CMP process
Author
Shaw, Dein ; Chang, Jassy
Author_Institution
Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume
24
Issue
4
fYear
2001
fDate
12/1/2001 12:00:00 AM
Firstpage
661
Lastpage
666
Abstract
There are two important things when doing the CMP, one is the high removal rate, and the other is low nonuniformity. The factors, which may effect the result of polishing process, are pressure applied to wafer and the rotation speed of the wafer. In this study, the best polishing pressure distribution was studied. The effect of different boundary conditions between wafer and wafer carrier on the polishing pressure distribution was analyzed. The clearance between pad and wafer also analyzed
Keywords
chemical mechanical polishing; semiconductor process modelling; CMP process efficiency; Preston equation; boundary conditions; clamping conditions; high removal rate; low nonuniformity; mathematical model; pad-wafer clearance; polishing pressure distribution; shear force; Boundary conditions; Chemical processes; Clamps; Costs; Glass; Helium; Manufacturing industries; Manufacturing processes; Production; Silicon compounds;
fLanguage
English
Journal_Title
Components and Packaging Technologies, IEEE Transactions on
Publisher
ieee
ISSN
1521-3331
Type
jour
DOI
10.1109/6144.974958
Filename
974958
Link To Document