Title :
A method to improve the efficiency of CMP process
Author :
Shaw, Dein ; Chang, Jassy
Author_Institution :
Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
12/1/2001 12:00:00 AM
Abstract :
There are two important things when doing the CMP, one is the high removal rate, and the other is low nonuniformity. The factors, which may effect the result of polishing process, are pressure applied to wafer and the rotation speed of the wafer. In this study, the best polishing pressure distribution was studied. The effect of different boundary conditions between wafer and wafer carrier on the polishing pressure distribution was analyzed. The clearance between pad and wafer also analyzed
Keywords :
chemical mechanical polishing; semiconductor process modelling; CMP process efficiency; Preston equation; boundary conditions; clamping conditions; high removal rate; low nonuniformity; mathematical model; pad-wafer clearance; polishing pressure distribution; shear force; Boundary conditions; Chemical processes; Clamps; Costs; Glass; Helium; Manufacturing industries; Manufacturing processes; Production; Silicon compounds;
Journal_Title :
Components and Packaging Technologies, IEEE Transactions on
DOI :
10.1109/6144.974958
