Title :
Low-Cost Thin Glass Interposers as a Superior Alternative to Silicon and Organic Interposers for Packaging of 3-D ICs
Author :
Sukumaran, Vijay ; Bandyopadhyay, Tapobrata ; Sundaram, Venky ; Tummala, Rao
Author_Institution :
Electr. & Comput. Eng. Dept., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Interconnecting integrated circuits (ICs) and 3-D-ICs to the system board (printed circuit board) are currently achieved using organic or silicon-based interposers. Organic interposers face several challenges in packaging 2-D and 3-D-ICs beyond the 32-nm node, primarily due to their poor dimensional stability and coefficient of thermal expansion (CTE) mismatch to silicon. Silicon interposers made with back-end of line wafer processes can achieve the required wiring and I/O density, but their high-cost limit them to high-performance applications. Glass is proposed as a superior alternative to organic and silicon-based interposers for packaging of future ICs and 3-D-ICs with highest I/Os at lowest cost. This paper presents for the first time a novel thin and large panel glass interposer capable of scaling to 700 mm and larger panels with potential for significant cost reduction over interposers made on 200-mm or 300-mm wafers. The formation of small through vias at high speed has been the biggest technical barrier for the adoption of glass as an interposer and system substrate; and this paper describes pioneering research in via-formation in thin glass substrates, using a novel “polymer-on-glass” approach. Electrical modeling and design of through package vias (TPVs) in glass is discussed in detail, and the feasibility of 50-μm pitch TPVs in 180-μm thin glass substrates has been demonstrated. The excellent surface finish and low CTE of glass leads to increased I/O density, and increased functionality per unit area leading to system miniaturization.
Keywords :
elemental semiconductors; glass; integrated circuit modelling; integrated circuit packaging; polymers; printed circuits; silicon; surface finishing; thermal expansion; three-dimensional integrated circuits; 2D IC packaging; 3D IC packaging; CTE mismatch; I/O density; Si; TPV design; coefficient of thermal expansion; electrical modeling; integrated circuit interconnection; large panel glass interposer; line wafer processes; low-cost thin glass interposers; organic interposers; polymer-on-glass approach; printed circuit board; silicon-based interposers; size 180 mum; size 200 mm; size 300 mm; size 32 nm; size 700 mm; surface finish; system board; system substrate; thin glass substrates; through package vias design; wiring; Glass; Laser ablation; Metallization; Polymers; Silicon; Substrates; Surface treatment; Panel processing; system-on-package (SOP); thin glass interposer; through package via (TPV); wet metallization;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2012.2204392