DocumentCode :
1558413
Title :
Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes
Author :
Asai, Hiroaki ; Sugimoto, Kenji ; Nashiyama, Isamu ; Iide, Yoshiya ; Shiba, Kensuke ; Matsuda, Mieko ; Miyazaki, Yoshio
Author_Institution :
High-Reliability Engineering & Components Corporation (HIREC), Tsukuba, Japan
Volume :
59
Issue :
4
fYear :
2012
Firstpage :
880
Lastpage :
885
Abstract :
Tolerance against single-event burnout (SEB) caused by terrestrial neutrons is one of the urgent issues in practical application of SiC power devices. This paper presents evaluation results of neutron-induced SEB in SiC power diodes and differences between SiC and Si devices from the SEB standpoint.
Keywords :
Neutrons; Protons; Radiation effects; Semiconductor diodes; Silicon; Silicon carbide; Testing; Power devices; silicon carbide (SiC); single event burnout; terrestrial neutron;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2012.2203145
Filename :
6243242
Link To Document :
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