Title :
Tunable barium strontium titanate thin film capacitors for RF and microwave applications
Author :
Tombak, Ali ; Maria, Jon-Paul ; Ayguavives, Francisco ; Jin, Zhang ; Stauf, Gregory T. ; Kingon, Angus I. ; Mortazawi, Amir
Author_Institution :
Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The measurement results for thin film barium strontium titanate (BST) based voltage tunable capacitors intended for RF applications are reported. At 9 V DC, BST capacitors fabricated using MOCVD (metalorganic chemical vapor deposition) method achieved 71% (3.4:1) tunability. The measured device quality factor (Q) for BST varactors is comparable with the device Q for commercially available varactor diodes of similar capacitance. The typical dielectric loss tangent was in the range 0.003-0.009 at VHF. Large signal measurement and modeling results for BST thin film capacitors are also presented.
Keywords :
MOCVD coatings; Q-factor; UHF devices; VHF devices; barium compounds; dielectric losses; ferroelectric capacitors; ferroelectric thin films; microwave devices; strontium compounds; thin film capacitors; tuning; varactors; 9 V; BST capacitors; BaSrTiO/sub 3/; BaSrTiO/sub 3/ capacitors; MOCVD growth; RF applications; VHF; device quality factor; dielectric loss tangent; ferroelectric capacitor; metalorganic chemical vapor deposition; microwave applications; thin film capacitors; varactors; voltage tunable capacitors; Barium; Binary search trees; Capacitors; Dielectric losses; Dielectric measurements; Radio frequency; Strontium; Titanium compounds; Transistors; Varactors;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/7260.975716
