• DocumentCode
    1558778
  • Title

    An extension of probabilistic simulation for reliability analysis of CMOS VLSI circuits

  • Author

    Najm, Farid N. ; Hajj, Ibrahim N. ; Yang, Ping

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • Volume
    10
  • Issue
    11
  • fYear
    1991
  • fDate
    11/1/1991 12:00:00 AM
  • Firstpage
    1372
  • Lastpage
    1381
  • Abstract
    The probabilistic simulation approach is extended to include the computation of the variance waveform of the power/ground current, in addition to its expected waveform. The focus is on the problem of estimating the median time-to-failure (MTF) due to electromigration (EM) in the power and ground buses of CMOS circuits. Theoretical results that quantify the relationship between the MTF and the statistics of the stochastic current are presented. This leads to a more accurate estimate of the MTF that requires both the expected and variance waveforms. A novel technique is then presented to compute the variance waveform for CMOS circuits, which has been incorporated into the probabilistic simulator CREST. Results of this implementation demonstrating efficiency and accuracy on a number of circuits are provided. The authors use these results to study the importance of the variance waveform by estimating its contribution to the MTF relative to that of the expected waveform
  • Keywords
    CMOS integrated circuits; VLSI; circuit analysis computing; circuit reliability; electromigration; failure analysis; probability; CMOS VLSI circuits; CREST; MTF; electromigration; median time-to-failure; power/ground current; probabilistic simulation; reliability analysis; stochastic current; variance waveform; Analysis of variance; Analytical models; Circuit analysis; Circuit analysis computing; Circuit simulation; Computational modeling; Instruments; Statistics; Stochastic processes; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.97616
  • Filename
    97616