DocumentCode :
1558803
Title :
Lossless 1×4 laser diode optical gate switch
Author :
Terui, Hiroshi ; Kominato, Toshimi ; Kobayashi, Morio
Author_Institution :
NTT Opto-Electron Lab., Ibaraki, Japan
Volume :
9
Issue :
11
fYear :
1991
fDate :
11/1/1991 12:00:00 AM
Firstpage :
1518
Lastpage :
1522
Abstract :
The fabrication of a compact 1×4 laser diode (LD) optical gate switch for the 1.3 μm band, comprising five LD optical gate submodules and a 1×4 planar lightwave circuit, is described. The switch exhibited a lossless switching function and polarization sensitivities of 0.5-1.1 dB, with operation currents of 45 to 55 mA. At operation currents of 120 mA, the switch exhibited positive gains of 9.0 to 10.2 dB. No power penalty was detected for nonreturn-to-zero (NRZ) transmissions of up to 2 Gb/s at -10 dBm input levels, when a narrowband optical filter for spontaneous emission reduction was used
Keywords :
optical logic; optical switches; semiconductor junction lasers; semiconductor switches; 1.3 micron; 45 to 55 mA; 9 to 10.2 dB; fabrication; lossless laser diode optical gate switch; lossless switching function; narrowband optical filter; nonreturn to zero transmissions; operation currents; planar lightwave circuit; polarization sensitivities; positive gains; power penalty; spontaneous emission reduction; Diode lasers; Narrowband; Optical device fabrication; Optical filters; Optical losses; Optical polarization; Optical sensors; Optical signal processing; Optical switches; Switching circuits;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.97640
Filename :
97640
Link To Document :
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