Title :
A resonant converter suitable for 650 V DC bus operation
Author :
Bhat, Ashoka K S
Author_Institution :
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
fDate :
10/1/1991 12:00:00 AM
Abstract :
A high-frequency resonant power converter configuration suitable for operation on a 650 V (nominal value) DC bus is described. Selection of the high-frequency switch and an appropriate resonant configuration are discussed. It is shown that a series-parallel resonant converter using insulated gate bipolar transistor (IGBT) gated bipolar/MOSFET cascode switches and operating above resonance is suitable for this application. A simplified analysis, a simple design procedure, and detailed experimental results are presented
Keywords :
busbars; insulated gate bipolar transistors; insulated gate field effect transistors; network synthesis; power convertors; power transistors; 650 V; DC bus; HF; MOSFET; design; insulated gate bipolar transistor; power transistors; resonant power converter; Analog-digital conversion; Bipolar transistors; Capacitors; Insulated gate bipolar transistors; MOSFET circuits; Pulse width modulation converters; Resonance; Switches; Switching converters; Voltage;
Journal_Title :
Power Electronics, IEEE Transactions on
