CW operation of a InGaAsP/InP gain-coupled distributed feedback laser with a corrugated active layer

Author

Inoue, T. ; Nakajima, S. ; Luo, Y. ; Oki, T. ; Iwaoka, H. ; Nakano, Y. ; Tada, K.

Author_Institution

Opt. Meas. Technol. Dev. Co. Ltd., Tokyo, Japan

Volume

3

Issue

11

fYear

1991

Firstpage

958

Lastpage

960

Abstract

A low-threshold continuous-wave (CW)-operable gain-coupled distributed-feedback laser with a corrugated active layer was realized with InGaAsP/InP materials by implementing active ion etching and organometallic vapor-phase epitaxy. Without any phase-shifting structures, the devices exhibited excellent single-longitudinal-mode oscillation, independent of facet reflection. Threshold currents as low as 12 mA and side-mode suppression ratios as high as 55 dB were demonstrated at a wavelength of 1.55 mu m.<>

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 1.55 micron; 12 mA; CW operation; InGaAsP-InP; active ion etching; continuous-wave; corrugated active layer; distributed feedback laser; gain-coupled; low-threshold; organometallic vapor-phase epitaxy; semiconductors; side-mode suppression ratios; single-longitudinal-mode oscillation; threshold currents; Distributed feedback devices; Epitaxial growth; Etching; Gratings; Indium phosphide; Laser feedback; Laser modes; Laser theory; Optical coupling; Resists;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.97825

Filename

97825