Title :
CW operation of a InGaAsP/InP gain-coupled distributed feedback laser with a corrugated active layer
Author :
Inoue, T. ; Nakajima, S. ; Luo, Y. ; Oki, T. ; Iwaoka, H. ; Nakano, Y. ; Tada, K.
Author_Institution :
Opt. Meas. Technol. Dev. Co. Ltd., Tokyo, Japan
Abstract :
A low-threshold continuous-wave (CW)-operable gain-coupled distributed-feedback laser with a corrugated active layer was realized with InGaAsP/InP materials by implementing active ion etching and organometallic vapor-phase epitaxy. Without any phase-shifting structures, the devices exhibited excellent single-longitudinal-mode oscillation, independent of facet reflection. Threshold currents as low as 12 mA and side-mode suppression ratios as high as 55 dB were demonstrated at a wavelength of 1.55 mu m.<>
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 1.55 micron; 12 mA; CW operation; InGaAsP-InP; active ion etching; continuous-wave; corrugated active layer; distributed feedback laser; gain-coupled; low-threshold; organometallic vapor-phase epitaxy; semiconductors; side-mode suppression ratios; single-longitudinal-mode oscillation; threshold currents; Distributed feedback devices; Epitaxial growth; Etching; Gratings; Indium phosphide; Laser feedback; Laser modes; Laser theory; Optical coupling; Resists;
Journal_Title :
Photonics Technology Letters, IEEE
